10 citations · 18 across the 5 of their papers we have counts for
Showing cond-mat.mtrl-sciShow all
2 papers · 1 filter
cond-mat.mtrl-sci2024★ 2 cited
Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
Guy Tsamo, Alla G. Nastovjak, Nataliya L. Shwartz +9
In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were design…
cond-mat.mtrl-sci2009★ 10 cited
First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES
M. Petit, Yamina Andre Ould-Metidji, Christine Robert-Goumet +3
The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser dio…