10 citations · 18 across the 5 of their papers we have counts for
5 papers
Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
Guy Tsamo, Alla G. Nastovjak, Nataliya L. Shwartz +9
In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were design…
Anomalous ambipolar transport in depleted GaAs nanowires
H. Hijazi, D. Paget, A C. H. Rowe +7
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ( cm doping le…
Charge and spin transport over record distances in GaAs metallic n-type nanowires : II nonlinear charge transport
Hadi Hijazi, Daniel Paget, Guillaume Monier +6
We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substr…
Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea
Hadi Hijazi, Daniel Paget, Guillaume Monier +6
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This wa…
First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES
M. Petit, Yamina Andre Ould-Metidji, Christine Robert-Goumet +3
The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser dio…