2 papers
cond-mat.mes-hall2024
Temperature and Electron Concentration Dependences of 1/f Noise in HgCdTe -- Evidence for a Mobility Fluctuations Mechanism
Adil Rehman, Volodymyr Petriakov, Ivan Yahniuk +9
HgCdTe is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. Th…
cond-mat.mtrl-sci2024
Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer
D. Yavorskiy, Y. Ivonyak, D. But +9
HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and su…