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physics.app-ph2026
Achieving Long Retention in Area-Dependent Resistive Memory with Phase-Separated Amorphous Tantalum Oxide
Sangyong Lee, Anton V. Ievlev, Dongjae Shin +2
Resistive random-access memory (ReRAM) is a promising future nonvolatile memory technology. Most ReRAM exhibit a fundamental tradeoff: filament-type ReRAM provides long data retent…
physics.app-ph2024★ 9 cited
Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation
Jingxian Li, Andrew J. Jalbert, Leah S. Simakas +6
CMOS-based microelectronics are limited to ~150°C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semi…