3 papers
physics.app-ph2026
Achieving Long Retention in Area-Dependent Resistive Memory with Phase-Separated Amorphous Tantalum Oxide
Sangyong Lee, Anton V. Ievlev, Dongjae Shin +2
Resistive random-access memory (ReRAM) is a promising future nonvolatile memory technology. Most ReRAM exhibit a fundamental tradeoff: filament-type ReRAM provides long data retent…
cs.ET2025
A self-heating electrochemical cell with nine decades of programmable linear resistance
Adam L. Gross, Sangheon Oh, Minseong Park +22
A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory c…
physics.app-ph2024
Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation
Jingxian Li, Andrew J. Jalbert, Leah S. Simakas +6
CMOS-based microelectronics are limited to ~150°C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semi…