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Host isotope mass effects on the hyperfine interaction of group-V donors in silicon
T. Sekiguchi, A. M. Tyryshkin, S. Tojo +12
The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopic…
Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination
Pierre-André Mortemousque, Simon Berger, Takeharu Sekiguchi +3
Bismuth donors ion-implanted in Si and Si are studied using magnetic resonance spectroscopy based on spin dependent recombination. The hyperfine clock transitio…
Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
P. A. Mortemousque, T. Sekiguchi, C. Culan +4
Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. T…
Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface
T. Sekiguchi, S. Yoshida, K. M. Itoh
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy (STM). The resulting atomi…
Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction
S. Yoshida, T. Sekiguchi, K. M. Itoh
We demonstrate that annealing of a vicinal Si(111) surface at about 800 C with a direct current in the direction that ascends the kinks enhances the formation of atomically straigh…