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Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities
Denis Basko
The absolute integrated intensity of the single-phonon Raman peak at 1580 cm^{-1} is calculated for a clean graphene monolayer. The resulting intensity is determined by the trigona…
Graphene Mode-Locked Ultrafast Laser
Z. Sun, T. Hasan, F. Torrisi +6
Graphene is at the center of a significant research effort. Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics. Its ele…
Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
D. M. Basko, S. Piscanec, A. C. Ferrari
Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in…
Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene
D. M. Basko
The paper reports a theoretical study of scattering of electrons by edges in graphene and its effect on Raman scattering. First, effective models are discussed for translationally…