157 citations · 317 across the 5 of their papers we have counts for
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Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…
Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
E. N. Yitamben, R. E. Butera, B. S. Swartzentruber +4
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2…
Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires
Z. Li, E. Z. Xu, Y. Losovyj +7
The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indi…