157 citations · 317 across the 5 of their papers we have counts for
5 papers
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…
Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
E. N. Yitamben, R. E. Butera, B. S. Swartzentruber +4
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2…
Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires
Z. Li, E. Z. Xu, Y. Losovyj +7
The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indi…
Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes
François Léonard, A. Alec Talin, B. S. Swartzentruber +1
We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conduct…
Unusually strong space-charge-limited current in thin wires
A. Alec Talin, François Léonard, B. S. Swartzentruber +2
The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electroni…