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20052018
most citedMetal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

304 citations · 693 across the 7 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2017

Polarization branches and optimization calculation strategy applied to ABO3 ferroelectrics

Lucian D. Filip, Neculai Plugaru

Berry phase polarization calculations have been investigated for several ferroelectric materials from the point of view of practical calculations. It was shown that interpretation…

cond-mat.mtrl-sci2016★ 51 cited

Dynamic electrical behavior of halide perovskite based solar cells

George Alexandru Nemnes, Cristina Besleaga, Andrei Gabriel Tomulescu +4

A dynamic electrical model is introduced to investigate the hysteretic effects in the I-V characteristics of perovskite based solar cells. By making a simple ansatz for the polariz…

cond-mat.mtrl-sci2009★ 74 cited

Epitaxial thin films of the multiferroic double perovskite Bi2FeCrO6 grown on (100)-oriented SrTiO3 substrates: Growth, characterization, and optimization

Riad Nechache, Catalin Harnagea, Louis-Philippe Carignan +7

The influence of the deposition pressure PO2 and substrate temperature TS during the growth of Bi2FeCrO6 thin films grown by pulsed laser deposition has been investigated. It is fo…

cond-mat.mtrl-sci2006★ 263 cited

Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single crystalline films

Ionela Vrejoiu, Gwenael Le Rhun, Lucian Pintilie +3

PbZrxTi1-xO3 (PZT) is one of the technologically most important ferroelectric materials. Bulk single-domain single crystals of PZT have never been synthesized for a significant com…

cond-mat.mtrl-sci2005★ 304 cited

Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

L. Pintilie, M. Alexe

A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the partic…