Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

Abstract

A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface; a deep trapping level of high concentration; the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as built-in voltage, charge density and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.

14 pages with 4 figures, manuscript under revision at Journal of Applied Physics for more than 1 year (submitted May 2004, first revision September 2004, second revision May 2005)

Cited by in corpus (10)

• Perovskites for Solar and Thermal Energy Harvesting: State of the Art Technologies, Current Scenario and Future Directions
• Electroresistance effects in ferroelectric tunnel barriers
• Space Charge Effects in Ferroelectric Thin Films
• On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
• Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles
• Microwave Conductivity of Ferroelectric Domains and Domain Walls in Hexagonal Rare-earth Ferrite
• Photovoltaic response around a unique180{\textdegree} ferroelectric domain wall in single crystalline BiFeO3
• Charged ferroelectric domain walls for deterministic a.c. signal control
• Electrical Degradation in Dielectric and Piezoelectric Oxides: Review of Defect Chemistry and Associated Characterization Techniques
• Conduction mechanism and switchable photovoltaic effect in (111) oriented BiFe${}_{0.95}$Mn${}_{0.05}$O${}_3$ thin film