11 citations · 17 across the 7 of their papers we have counts for
5 papers · 1 filter
Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
Ashlee M. García, Hosni A. Kaissi, Jarod E. Meyer +9
Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe…
Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy
Kira J. Martin, Autumn Y. Lee, Pranav Mahaadev +6
Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizi…
Epitaxial Growth of Anisotropic SnSe on GaAs(001) via Step-Edge Orientation Control
Pooja D. Reddy, Zahra N. Heussen, Kunal Mukherjee
Epitaxial growth of orthorhombic SnSe on cubic substrates is challenging due to lattice-symmetry mismatch and anisotropic bonding. Here we demonstrate that epitaxial films with sha…
Heteroepitaxial growth of highly anisotropic films on GaAs
Kelly Xiao, Virat Tara, Pooja D. Reddy +6
The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In…
Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films
Pooja D. Reddy, Leland Nordin, Lillian Hughes +2
Bulk PbSnSe has a two-phase region or miscibility gap as the crystal changes from a Van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related…