Electronic topological transitions in Nb${}_3$X (X = Al, Ga, In, Ge and Sn) under compression investigated by first principles calculations

P. V. Sreenivasa Reddy, V. Kanchana, G. Vaitheeswaran +2

First principles electronic structure calculations of A-15 type Nb${}_3$X (X = Al, Ga, In, Ge and Sn) compounds are performed at ambient and high pressures. Mechanical stability is c…