156 citations · 1.4k across the 44 of their papers we have counts for
10 papers · 1 filter
Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric
Rajib Rahman, Erik Nielsen, Richard P. Muller +1
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of th…
Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
R. M. Jock, S. Shankar, A. M. Tyryshkin +7
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices…
Spatial distribution of electrons on a superfluid helium charge-coupled device
Maika Takita, F. R. Bradbury, T. M. Gurrieri +4
Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing a…
SiGe/Si quantum dot electron spin decoherence dependence on Ge
Wayne M. Witzel, Rajib Rahman, Malcolm S. Carroll
We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on Ge in th…
Triangulating tunneling resonances in a point contact
Nathaniel C. Bishop, Ralph W. Young, Gregory A. Ten Eyck +8
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device str…
Extremely efficient clocked electron transfer on superfluid helium
F. R. Bradbury, Maika Takita, T. M. Gurrieri +4
Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium filled channels by co-opting silicon processing technology to cons…