activity
20052012
most citedGate-tuning of graphene plasmons revealed by infrared nano-imaging

2.2k citations · 4.6k across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2012★ 2.2k cited

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Z. Fei, A. S. Rodin, G. O. Andreev +12

Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid prog…

cond-mat.mes-hall2011★ 567 cited

Infrared nanoscopy of Dirac plasmons at the graphene-SiO2 interface

Zhe Fei, Gregory O. Andreev, Wenzhong Bao +13

We report on infrared (IR) nanoscopy of 2D plasmon excitations of Dirac fermions in graphene. This is achieved by confining mid-IR radiation at the apex of a nanoscale tip: an appr…

cond-mat.mes-hall2011★ 109 cited

Near-field spectroscopy of silicon dioxide thin films

Lingfeng M. Zhang, Gregory O. Andreev, Zhe Fei +6

We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resona…

cond-mat.str-el2009★ 200 cited

Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide

M. M. Qazilbash, M. Brehm, G. O. Andreev +11

We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate…

cond-mat.str-el2008★ 1.5k cited

Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging

M. M. Qazilbash, M. Brehm, Byung-Gyu Chae +9

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by do…

cond-mat.mes-hall2005★ 99 cited

Excitons in Electrostatic Traps

A. T. Hammack, N. A. Gippius, G. O. Andreev +3

We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for…