14 citations · 43 across the 6 of their papers we have counts for
3 papers · 1 filter
Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)
William A. O'Brien, Meng Qi, Lifan Yan +5
This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots…
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals
Chad A. Stephenson, William A. O'Brien, Meng Qi +3
Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with H…
Control of InGaAs facets using metal modulation epitaxy (MME)
Mark A. Wistey, Ashish K. Baraskar, Uttam Singisetti +6
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned…