14 citations · 43 across the 6 of their papers we have counts for
6 papers
Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells
Rithvik Ramesh, Madeline Brown, Amberly Ricks +21
The recent, rapid advances in nonlinear chipscale nanophotonics in the visible and near-infrared have been largely driven by manipulating the local dielectric environment proximate…
The Carbon State in Dilute Germanium Carbides
I. A. Gulyas, C. A. Stephenson, Qian Meng +2
Conduction and valence band states for the highly mismatched alloy (HMA) Ge:C are projected onto Ge crystal states, Ge vacancy states, and Ge/C atomic orbitals, revealing that subs…
Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)
William A. O'Brien, Meng Qi, Lifan Yan +5
This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots…
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals
Chad A. Stephenson, William A. O'Brien, Meng Qi +3
Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with H…
Control of InGaAs facets using metal modulation epitaxy (MME)
Mark A. Wistey, Ashish K. Baraskar, Uttam Singisetti +6
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned…
Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects
Meng Qi, Chad A. Stephenson, Vladimir Protasenko +4
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were for…