activity
20092021
most citedCarbon p Electron Ferromagnetism in Silicon Carbide

42 citations · 255 across the 11 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2020★ 27 cited

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Michaela Sojkova, Edmund Dobrocka, Peter Hutar +7

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline…

cond-mat.mtrl-sci2015★ 42 cited

Carbon p Electron Ferromagnetism in Silicon Carbide

Y. Wang, Y. Liu, G. Wang +11

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relat…

cond-mat.mtrl-sci2015★ 37 cited

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

Yutian Wang, Yu Liu, Elke Wendler +12

Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently…

cond-mat.mtrl-sci2014★ 36 cited

Disentangling defect-induced ferromagnetism in SiC

Yutian Wang, Lin Li, Slawomir Prucnal +9

We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradia…

cond-mat.mtrl-sci2014★ 13 cited

Structural and magnetic properties of irradiated SiC

Yutian Wang, Xuliang Chen, Lin Li +8

We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin re…

cond-mat.mtrl-sci2009★ 1 cited

Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy

R. Gonzalez-Arrabal, Y. Gonzalez, L. Gonzalez +3

We report on the magnetic and structural properties of Ar and Mn implanted InAs epitaxial films grown on GaAs (100) by Molecular Beam Epitaxy (MBE) and the effect of Rapid Thermal…