Y. Matsushita

most citedAtomic scale localization of Kohn-Sham wavefunction at SiO2/4H-SiC interface under electric field, deviating from envelope function by effective mass approximation

5 citations · 8 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2023★ 3 cited

Effect of nitrogen introduced at the SiC/SiO $_{2}$ interface and SiC side on the electronic states by first-principles calculation

Keita Tachiki, Yusuke Nishiya, Jun-ichi Iwata +1

In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO $_{2}$ interface when nitrogen is introduced as a dopant within a few nm of…

cond-mat.mtrl-sci2023★ 5 cited

Atomic scale localization of Kohn-Sham wavefunction at SiO2/4H-SiC interface under electric field, deviating from envelope function by effective mass approximation

Hironori Yoshioka, Jun-Ichi Iwata, Yu-ichiro Matsushita

To clarify the cause of the low channel conductivity at the SiO2/4H-SiC interface, the wavefunction at the SiC conduction band minimum was calculated using density functional theor…

Effect of nitrogen introduced at the SiC/SiO2​ interface and SiC side on the electronic states by first-principles calculation

Atomic scale localization of Kohn-Sham wavefunction at SiO2/4H-SiC interface under electric field, deviating from envelope function by effective mass approximation

Effect of nitrogen introduced at the SiC/SiO $_{2}$ interface and SiC side on the electronic states by first-principles calculation