5 citations · 5 across the 2 of their papers we have counts for
3 papers
Quantum electrometry in a silicon carbide power device
Yuichi Yamazaki, Akira Kiyoi, Naoyuki Kawabata +7
For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map…
Effect of nitrogen introduced at the SiC/SiO interface and SiC side on the electronic states by first-principles calculation
Keita Tachiki, Yusuke Nishiya, Jun-ichi Iwata +1
In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO interface when nitrogen is introduced as a dopant within a few nm of…
Atomic scale localization of Kohn-Sham wavefunction at SiO2/4H-SiC interface under electric field, deviating from envelope function by effective mass approximation
Hironori Yoshioka, Jun-Ichi Iwata, Yu-ichiro Matsushita
To clarify the cause of the low channel conductivity at the SiO2/4H-SiC interface, the wavefunction at the SiC conduction band minimum was calculated using density functional theor…