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cond-mat.mes-hall2026
Multi-level π-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator
Luigi Ruggiero, Vera Jo Weibel, Pauline Drexler +5
Using on-chip microwave measurements, we investigate multilevel -junctions formed by proximitized quantum dot (QD) in a germanium (Ge)/silicon-germanium (SiGe) heterostructure.…
cond-mat.mtrl-sci2026
Direct observation of strain and confinement shaping the hole subbands of Ge quantum wells
Enrico Della Valle, Arianna Nigro, Miki Bonacci +6
Germanium-silicon-germanium (Ge/SiGe) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where st…