9 citations · 18 across the 6 of their papers we have counts for
6 papers
Multi-level π-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator
Luigi Ruggiero, Vera Jo Weibel, Pauline Drexler +5
Using on-chip microwave measurements, we investigate multilevel -junctions formed by proximitized quantum dot (QD) in a germanium (Ge)/silicon-germanium (SiGe) heterostructure.…
Direct observation of strain and confinement shaping the hole subbands of Ge quantum wells
Enrico Della Valle, Arianna Nigro, Miki Bonacci +6
Germanium-silicon-germanium (Ge/SiGe) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where st…
High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
Luigi Ruggiero, Carlo Ciacca, Pauline Drexler +5
Superconducting resonators integrated with Ge quantum wells (QWs) offer a promising platform for hybrid quantum devices. Yet, in the most common heterostructure architectures, they…
Impact of surface treatments on the transport properties of germanium 2DHGs
Nikunj Sangwan, Eric Jutzi, Christian Olsen +4
Holes in planar germanium (Ge) heterostructures show promise for quantum applications, particularly in superconducting and spin qubits, due to strong spin-orbit interaction, low ef…
A backgate for enhanced tunability of holes in planar germanium
Luigi Ruggiero, Arianna Nigro, Ilaria Zardo +1
Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained german…
High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures
Arianna Nigro, Eric Jutzi, Nicolas Forrer +3
A great deal of interest is directed nowadays towards the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaini…