46 citations · 47 across the 4 of their papers we have counts for
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Molecular Beam Epitaxy of 2H-TaS few-layers on GaN(0001)
Constantin Hilbrunner, Tobias Meyer, Joerg Malindretos +1
2H-TaS few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825C induces best structural properties of the overlayer, as reve…
Tracking defect-induced ferromagnetism in GaN:Gd
Martin Roever, Joerg Malindretos, Amilcar Bedoya-Pinto +3
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy (MBE). A poor reproducibility with respect to the magnetic properties is found in these sample…
Catalyst-free selective area growth of InN nanocolumns by MBE
C. Denker, J. Malindretos, B. Landgraf +1
Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature…