3 papers
cs.AR2026
VeRA+: Vector-Based Lightweight Digital Compensation for Drift-Resilient RRAM In-Memory Computing
Weirong Dong, Kai Zhou, Zhen Kong +8
RRAM-based in-memory computing (IMC) offers high energy efficiency but suffers from conductance drift that severely degrades long-term accuracy. Existing approaches including retra…
physics.app-ph2023
Sub-5-nm Ultra-thin InO Transistors for High-Performance and Low-Power Electronic Applications
Linqiang Xu, Lianqiang Xu, Jun Lan +7
Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…
eess.SP2023
Realizing In-Memory Baseband Processing for Ultra-Fast and Energy-Efficient 6G
Qunsong Zeng, Jiawei Liu, Mingrui Jiang +7
To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-ef…