20 citations · 20 across the 4 of their papers we have counts for
5 papers
Temperature--Composition Mapping and Growth-History Dependence of rBN-Related Raman Responses in BN Grown on Fe--B under Flowing N
Donghoi Kim, Ayoung Cho, Kyeongho Park +2
BN products formed on Fe--B sources under flowing N were investigated primarily at 1250--1400~C over nominal B contents of 1--10~wt\% to determine how rBN-related Raman…
Sapphire-Side hBN Formation by Ni--Cr-Mediated Growth in a Stacked Ni--Cr/Boron/Sapphire Configuration: Effect of Boron Supply
Donghoi Kim, Aelim Ha, Soohyung Park +2
Metal-mediated growth provides an effective route to high-quality hexagonal boron nitride (hBN), but hBN formation on the metal does not necessarily ensure hBN formation on an adjo…
GaN Nucleation Landscape on Patterned Sapphire Shaped by the Growth Temperature of Directly Grown Boron-Compound Masks
Yunjin Heo, Donghoi Kim, Hyeonoh Jo +4
The growth temperature of directly grown boron-compound masks on patterned sapphire can modify the local accessibility of the underlying sapphire surface and thereby alter the subs…
Propagation-mediated amplification of \{11\={2}0\}-biased inversion domain boundary alignment in polarity-mixed GaN lateral overgrowth
Harim Song, Donghoi Kim, Chinkyo Kim
GaN polarity inversion and the associated inversion domain boundaries (IDBs) are frequently observed during lateral overgrowth and are often discussed in terms of the small energet…
Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?
Dongsoo Jang, Chulwoo Ahn, Youngjun Lee +6
The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals ma…