Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?

Abstract

The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote `thru-hole' epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a three-dimensional amorphous oxide film in-between, we demonstratively grew GaN domains through thru-holes via connectedness-initiated epitaxial lateral overgrowth, not only readily detachable but also crystallographically aligned with a substrate. Our proposed nonremote thru-hole epitaxy, which is embarrassingly straightforward and undemanding, can provide wider applicability of the benefits known to be only available by the claimed remote epitaxy.

arXiv comment19 pages, 5 figures, Supplementary Information (26 pages, 15 figures)

References in corpus (3)

• Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
• Ab initio Study of Aspirin Adsorption on Single-walled Carbon and Carbon Nitride Nanotubes
• New insights in the lattice dynamics of monolayers, bilayers, and trilayers of WSe2 and unambiguous determination of few-layer-flakes' thickness

Cited by in corpus (3)

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