986 citations · 3.9k across the 27 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 223 cited
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
Mengwei Si, Yaoqiao Hu, Zehao Lin +7
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…
cond-mat.mtrl-sci2020★ 64 cited
Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS-WSe Heterobilayers
Dacen Waters, Yifan Nie, Felix Lüpke +11
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment (), assoc…
physics.atom-ph2020★ 7 cited
Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches
Yeonghun Lee, Xiaolong Yao, Massimo V. Fischetti +1
To investigate inelastic electron scattering, which is ubiquitous in various fields of study, we carry out ab initio study of the real-time dynamics of a one-dimensional electron w…