2 papers
cond-mat.mtrl-sci2025
Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2
Nashrah Afroze, Hamoon Fahrvandi, Guodong Ren +31
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of…
cond-mat.mtrl-sci2024
Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor
Daniel B Durham, Manifa Noor, Khandker Akif Aabrar +5
In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affec…