104 citations · 286 across the 11 of their papers we have counts for
6 papers · 1 filter
Van der Waals epitaxy of Weyl-semimetal Td-WTe
Alexandre Llopez, Frédéric Leroy, Calvin Tagne-Kaegom +13
Epitaxial growth of WTe offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thick…
Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
G. Kremer, J. C. Alvarez-Quiceno, T. Pierron +11
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, o…
Electronic band structure of ultimately thin silicon oxide on Ru(0001)
G. Kremer, J. C. Alvarez-Quiceno, S. Lisi +12
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectri…
Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2
S. Xing, J. Mansart, V. Brouet +10
The electronic structure of the reentrant superconductor Eu(FeIr)As (T = 22 K) with coexisting ferromagnetic order (T = 18 K) is investigated…
Symmetry Dependent Scattering by Minority Interface Resonance States in Single-crystal Magnetic Tunnel Junctions
Y. Lu, H. X. Yang, C. Tiusan +8
Symmetry dependent scattering effect by minority interface resonance states (IRS) has been evidenced in full-epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs). Two types of samp…
Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature
R. Cortes, A. Tejeda, J. Lobo +5
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that th…