activity
20062019
most citedElectronic band structure of ultimately thin silicon oxide on Ru(0001)

21 citations · 23 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2019

Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes

A. L. Miettinen, M. S. Nevius, W. Ko +8

Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, i…

cond-mat.mtrl-sci201921 cited

Electronic band structure of ultimately thin silicon oxide on Ru(0001)

G. Kremer, J. C. Alvarez-Quiceno, S. Lisi +12

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectri…

cond-mat.mtrl-sci2018

Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2

S. Xing, J. Mansart, V. Brouet +10

The electronic structure of the reentrant superconductor Eu(FeIr)As (T = 22 K) with coexisting ferromagnetic order (T = 18 K) is investigated…

cond-mat.str-el20092 cited

Surface state bi-polarons formation on a triangular lattice in the sp-type alkali/Si(111) Mott insulator

L. A. Cardenas, Y. Fagot-Revurat, L. Moreau +2

We report on new LEED, STM and ARPES studies of alkali/Si(111) previously established as having a Mott insulating ground state at surface. The observation of a strong temperature d…

cond-mat.mtrl-sci2006

Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

R. Cortes, A. Tejeda, J. Lobo +5

We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that th…