activity
20022024
most citedElectronic band structure of ultimately thin silicon oxide on Ru(0001)

21 citations · 26 across the 3 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2024★ 3 cited

Van der Waals epitaxy of Weyl-semimetal Td-WTe

Alexandre Llopez, Frédéric Leroy, Calvin Tagne-Kaegom +13

Epitaxial growth of WTe offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thick…

cond-mat.mtrl-sci2020

Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

G. Kremer, J. C. Alvarez-Quiceno, T. Pierron +11

Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, o…

cond-mat.mtrl-sci2019

Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers

Protyush Sahu, Yifei Yang, Yihong Fan +12

Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputter…

cond-mat.mtrl-sci2019★ 21 cited

Electronic band structure of ultimately thin silicon oxide on Ru(0001)

G. Kremer, J. C. Alvarez-Quiceno, S. Lisi +12

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectri…

cond-mat.mtrl-sci2018

Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2

S. Xing, J. Mansart, V. Brouet +10

The electronic structure of the reentrant superconductor Eu(FeIr)As (T = 22 K) with coexisting ferromagnetic order (T = 18 K) is investigated…

cond-mat.str-el2017

Evidence for weakly correlated oxygen holes in the highest-T cuprate superconductor HgBaCaCuO

A. Chainani, M. Sicot, Y. Fagot-Revurat +8

We study the electronic structure of HgBaCaCuO (Hg1223 ; T = 134 K) using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Resona…