108 citations · 355 across the 12 of their papers we have counts for
5 papers · 1 filter
Van der Waals epitaxy of Weyl-semimetal Td-WTe
Alexandre Llopez, Frédéric Leroy, Calvin Tagne-Kaegom +13
Epitaxial growth of WTe offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thick…
Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
G. Kremer, J. C. Alvarez-Quiceno, T. Pierron +11
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, o…
Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers
Protyush Sahu, Yifei Yang, Yihong Fan +12
Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputter…
Electronic band structure of ultimately thin silicon oxide on Ru(0001)
G. Kremer, J. C. Alvarez-Quiceno, S. Lisi +12
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectri…
Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2
S. Xing, J. Mansart, V. Brouet +10
The electronic structure of the reentrant superconductor Eu(FeIr)As (T = 22 K) with coexisting ferromagnetic order (T = 18 K) is investigated…