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First principles study of electron transport through diarythylene transition metal dichalcogenide molecular switch
A. Ramazani, F. Shayeganfar, V. Sundararaghavan +1
Computational methods are fast becoming an integral part of nanoelectronics design process. With increasing computational power, electron transport simulation methods such as Non-e…
High temperature mid-IR polarizer via natural in-plane hyperbolic Van der Waals crystals
Nihar Ranjan Sahoo, Saurabh Dixit, Anuj Kumar Singh +3
Integration of conventional mid to long-wavelength infrared polarizers with chip-scale platforms is restricted by their bulky size and complex fabrication. Van der Waals materials…
Electronegative metal dopants improve switching consistency in Al2O3 resistive switching devices
Zheng Jie Tan, Vrindaa Somjit, Cigdem Toparli +2
Resistive random access memories are promising for non-volatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks…
Magnetically-defined topological edge plasmons in edgeless electron gas
Dafei Jin, Yang Xia, Thomas Christensen +11
Topological materials bear gapped excitations in bulk yet protected gapless excitations at boundaries. Magnetoplasmons (MPs), as high-frequency density excitations of two-dimension…
Optical Metamaterials at Near and Mid IR Range Fabricated by Nanoimprint Lithography
W. Wu, E. Kim, E. Ponizovskaya +10
Two types of optical metamaterials operating at near-IR and mid-IR frequencies, respectively, have been designed, fabricated by nanoimprint lithography (NIL), and characterized by…