activity
20072013
most citedDensity matrix theory of transport and gain in quantum cascade lasers in a magnetic field

43 citations · 185 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2013★ 9 cited

Optical absorption in highly-strained Ge/SiGe quantum wells: the role of Γ-to-Δ scattering

L. Lever, Z. Ikonić, A. Valavanis +7

We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive…

cond-mat.mes-hall2012★ 41 cited

An extended density matrix model applied to silicon-based terahertz quantum cascade lasers

T. V. Dinh, A. Valavanis, L. J. M. Lever +2

Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important…

cond-mat.mes-hall2011★ 25 cited

Material configurations for n-type silicon-based terahertz quantum cascade lasers

A. Valavanis, T. V. Dinh, L. J. M. Lever +2

Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a vari…

cond-mat.mes-hall2009★ 23 cited

Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

A. Valavanis, L. Lever, C. A. Evans +2

Although most work toward the realization of group IV quantum cascade lasers (QCLs) has focused on valence-band transitions, there are many desirable properties associated with the…

cond-mat.mes-hall2009★ 24 cited

Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces

A. Valavanis, Z. Ikonić, R. W. Kelsall

Scattering rate calculations in two-dimensional Si/SiGe systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces, however, ma…

cond-mat.mes-hall2009★ 20 cited

Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs. effective mass calculation

A. Valavanis, Z. Ikonić, R. W. Kelsall

Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-val…