An extended density matrix model applied to silicon-based terahertz quantum cascade lasers
arXiv:1206.0280 · doi:10.1103/PhysRevB.85.235427
Abstract
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device designs. We describe a density matrix transport model that is designed to be more general than those in previous studies and to require less a priori knowlege of electronic bandstructure, allowing its use in semi-automated design procedures. The basis of the model includes all states involved in interperiod transport, and our steady-state solution extends beyond the rotating-wave approximation by including DC and counter-propagating terms. We simulate the potential performance of bound-to-continuum Ge/SiGe QCLs and find that devices with 4-5-nm-thick barriers give the highest simulated optical gain. We also examine the effects of interdiffusion between Ge and SiGe layers; we show that if it is taken into account in the design, interdiffusion lengths of up to 1.5 nm do not significantly affect the simulated device performance.
8 pages, 4 figures
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Cited by in corpus (4)
- Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
- Optoelectronic device simulations based on macroscopic Maxwell-Bloch equations
- Density matrix Monte Carlo modeling of quantum cascade lasers
- Density Matrix Modeling of Quantum Cascade Lasers without an Artificially Localized Basis: A Generalized Scattering Approach