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20092013
most citedMaterial configurations for n-type silicon-based terahertz quantum cascade lasers

25 citations · 90 across the 5 of their papers we have counts for

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cond-mat.mes-hall201312 cited

Terahertz quantum cascade lasers with thin resonant-phonon depopulation active regions and surface-plasmon waveguides

M. Salih, P. Dean, A. Valavanis +5

We report three-well, resonant-phonon depopulation terahertz quantum cascade lasers with semi-insulating surface-plasmon waveguides and reduced active region (AR) thicknesses. Devi…

cond-mat.mes-hall20139 cited

Optical absorption in highly-strained Ge/SiGe quantum wells: the role of Γ-to-Δ scattering

L. Lever, Z. Ikonić, A. Valavanis +7

We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive…

cond-mat.mes-hall201125 cited

Material configurations for n-type silicon-based terahertz quantum cascade lasers

A. Valavanis, T. V. Dinh, L. J. M. Lever +2

Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a vari…

cond-mat.mes-hall200924 cited

Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces

A. Valavanis, Z. Ikonić, R. W. Kelsall

Scattering rate calculations in two-dimensional Si/SiGe systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces, however, ma…

cond-mat.mes-hall200920 cited

Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs. effective mass calculation

A. Valavanis, Z. Ikonić, R. W. Kelsall

Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-val…