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Tixuan Tan

4 papers hereh-index 6120 citations9 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2
  • middle author2

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3
  • cond-mat.str-el1
same name
  • Tixuan Tan — 2 papers, h 3
  • Tixuan Tan — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

4 papers

cond-mat.mes-hall2026

Visualizing orbital magnetism in electron doped rhombohedral multilayer graphene

Owen I. Sheekey, Trevor B. Arp, Benjamin A. Foutty +24

Electron doped rhombohedral multilayer graphene at high displacement field features an exceptionally flat band minimum with near-ideal quantum geometry. Experiments in this regime…

cond-mat.mes-hall2025

The ideal limit of rhombohedral graphene: Interaction-induced layer-skyrmion lattices and their collective excitations

Tixuan Tan, Patrick J. Ledwith, Trithep Devakul

We introduce an ideal limit of rhombohedral graphene multilayers. In this limit, we show analytically how short-range repulsion stabilizes a layer-pseudospin skyrmion lattice, whic…

cond-mat.mes-hall2025

Nonvolatile Switching of Magnetism via Gate-Induced Sliding in Tetralayer Graphene

Daniel Brandon, Tixuan Tan, Yiwen Ai +7

Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arr…

cond-mat.str-el2025

Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering

Tixuan Tan, Aidan P. Reddy, Liang Fu +1

We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate t…

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