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Incommensurate antiferromagnetic order in weakly frustrated two-dimensional van der Waals insulator CrPSe
Baithi Mallesh, Ngoc Toan Dang, Tuan Anh Tran +10
Although the magnetic order is suppressed by a strong magnetic frustration, it is maintained but appears in complex order forms such as a cycloid or spin density wave in weakly fru…
Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants
Bumsub Song, Seok Joon Yun, Jinbao Jiang +7
One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunabili…
Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2
Eva A. A. Pogna, Margherita Marsili, Domenico De Fazio +9
Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of…
High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors
D. De Fazio, I. Goykhman, M. Bruna +9
We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single laye…
Doping dependence of the Raman spectrum of defected graphene
M. Bruna, A. K. Ott, M. Ijas +3
We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monito…
Interference effect on Raman spectrum of graphene on SiO_2/Si
Duhee Yoon, Hyerim Moon, Young-Woo Son +5
The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic…