Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit

Hwayong Noh, M. P. Lilly, D. C. Tsui +5

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_s$ is…