activity
20092026
most citedNon-Thermal Resistive Switching in Mott Insulators

124 citations · 666 across the 28 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

9 papers · 1 filter

cond-mat.mtrl-sci2026

Martensitic laminate geometry controls electronic phase transitions in a Mott insulator

Ziming Shao, Benjamin Gregory, Suchismita Sarker +4

Symmetry-lowering structural phase transitions result in multiple degenerate structures whose coexistence is determined by macroscopic strain compatibility. In quantum materials, t…

cond-mat.mtrl-sci2025

Reversal of strain state in a Mott insulator thin film by controlling substrate morphology

Reetendra Singh, Abhishek Rakshit, Galit Atiya +3

The V2O3 phase diagram contains two insulating phases and one metallic phase with different lattice structures. The stability of these phases is very sensitive to pressure, offerin…

cond-mat.mtrl-sci2025

Memory in strain-tuned insulator-metal-insulator sequence of transitions after photoexcitation in the Mott material V2O3

O. Yu. Gorobtsov, Y. Kalcheim, Z. Shao +9

Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless,…

cond-mat.mtrl-sci2024

X-ray Nano-imaging of a Heterogeneous Structural Phase Transition in V2O3

Ziming Shao, Aileen Luo, Eti Barazani +5

Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insu…

cond-mat.mtrl-sci2023★ 1 cited

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Alexandre Pofelski, Sergio Valencia, Yoav Kalcheim +8

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restri…

cond-mat.mtrl-sci2020★ 31 cited

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Coline Adda, Min-Han Lee, Yoav Kalcheim +6

Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is o…