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cond-mat.mtrl-sci2026
Physical Basis for Band Transport and Dimensionality in Amorphous Oxide Semiconductor Field-Effect Transistors
Ananth Dodabalapur, Chankeun Yoon, Xiao Wang
A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally de…
cond-mat.mtrl-sci2026
Velocity-field characteristics and device performance in nanoscale amorphous oxide Thin-Film-Transistors
Chankeun Yoon, Xiao Wang, Jatin Vikram Singh +2
The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental d…