4 citations · 7 across the 3 of their papers we have counts for
4 papers
Physical Basis for Band Transport and Dimensionality in Amorphous Oxide Semiconductor Field-Effect Transistors
Ananth Dodabalapur, Chankeun Yoon, Xiao Wang
A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally de…
Velocity-field characteristics and device performance in nanoscale amorphous oxide Thin-Film-Transistors
Chankeun Yoon, Xiao Wang, Jatin Vikram Singh +2
The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental d…
Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy
Jia Yu, Yuchen Zhou, Xiao Wang +3
The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional s…
Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors
Jia Yu, Yuchen Zhou, Xiao Wang +2
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale ch…