132 citations · 132 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2010★ 92 cited
One-by-one trap activation in silicon nanowire transistors
N. Clement, K. Nishiguchi, A. Fujiwara +1
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an e…
cond-mat.mes-hall2010★ 79 cited
A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity
N. Clement, K. Nishiguchi, J. F. Dufreche +3
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-nois…