61 citations · 112 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2023★ 8 cited
Polar discontinuities and interfacial electronic properties of BiOSe on SrTiO
Ziye Zhu, Jingshan Qi, Xiaorui Zheng +2
The layered oxychalcogenide semiconductor BiOSe (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattic…
cond-mat.mtrl-sci2023★ 39 cited
Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering
Mengqi Wu, Zhefeng Lou, Chen-Min Dai +8
Phase engineering by strains in 2D semiconductors is of great importance for a variety of applications. Here, we present a study of strain induced ferroelectric (FE) transition on…