37 citations · 37 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2014★ 37 cited
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
C. Himwas, M. den Hertog, Le Si Dang +2
The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This i…
cond-mat.mtrl-sci2012
Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
Le Thuy Thanh Giang, C. Bougerol, H. Mariette +1
Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distri…