activity
20102024
most citedNanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

185 citations · 375 across the 10 of their papers we have counts for

collaborators

10 papers

physics.app-ph2024

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators

N. Buatip, T. Auzelle, P. John +8

In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitatio…

cond-mat.mtrl-sci2019

Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductors Nanowires

L. Jaloustre, S. Le-Denmat, T. Auzelle +4

Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics…

cond-mat.mes-hall2016★ 24 cited

Nanometre scale monitoring of the quantum confined stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

L. F. Zagonel, L. H. G. Tizei, G. Z. Vitiello +10

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optica…

cond-mat.mtrl-sci2015★ 27 cited

Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires

R. Songmuang, Le Thuy Thanh Giang, J. Bleuse M. Den Hertog +2

We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular be…

cond-mat.mtrl-sci2012★ 25 cited

Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

F. González-Posada, R. Songmuang, M. Den Hertog +1

In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinea…

cond-mat.mtrl-sci2012★ 185 cited

Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

Luiz Fernando Zagonel, Stefano Mazzucco, Marcel Tencé +9

We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-m…

cond-mat.mtrl-sci2012★ 39 cited

Visualising highly localised luminescence in GaN/AlN heterostructures in nanowires

L. F. Zagonel, L. Rigutti, M. Tchernycheva +3

The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) usi…

cond-mat.mtrl-sci2012

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Le Thuy Thanh Giang, C. Bougerol, H. Mariette +1

Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distri…

cond-mat.mtrl-sci2011

Spontaneous formation of well-defined Al rich shell structures in AlxGa1-xN/GaN nanowires

D. Gonzalez, R. Fath, T. Ben +1

Growth of catalyst-free AlxGa1-xN (0.15<x<0.50)/GaN nanowires by plasma assisted molecular beam epitaxy is thoroughly structural and chemical analyzed by using transmission electro…

cond-mat.mes-hall2010★ 75 cited

Quantum transport in GaN/AlN double-barrier heterostructure nanowires

R. Songmuang, G. Katsaros, E. Monroy +4

We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy en…