most citedElectric-field control of spin accumulation signals in silicon at room temperature

60 citations · 145 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2011★ 50 cited

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Y. Ando, K. Kasahara, K. Yamane +6

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The…