most citedAluminum Scandium Nitride as a Functional Material at 1000°C

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cond-mat.mes-hall2025

Enhancing Electrical Properties of Selectively Grown In-Plane InAs Nanowires using InGaAs Buffer and Capping Layers

Pradip Adhikari, Anjali Rathore, Dayrl P Briggs +2

In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, a…