2 citations · 2 across the 1 of their papers we have counts for
3 papers
Enhancing Electrical Properties of Selectively Grown In-Plane InAs Nanowires using InGaAs Buffer and Capping Layers
Pradip Adhikari, Anjali Rathore, Dayrl P Briggs +2
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, a…
Aluminum Scandium Nitride as a Functional Material at 1000°C
Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao +10
Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric proper…
Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing
Shubham Mondal, Md Mehedi Hasan Tanim, Garrett Baucom +9
The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses…