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20102026
most citedOverlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

10 citations · 11 across the 3 of their papers we have counts for

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Showing 2025 · cond-mat.mes-hallShow all

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cond-mat.mes-hall2025★ 1 cited

Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

J. P. Wendoloski, J. Hillier, S. D. Liles +17

The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…